gate oxidation meaning in Chinese
栅极氧化
Examples
- Problems about fabrication of sige - oi substrate , low - temperature gate oxidation and source / drain ion implantation are discussed after considering technology level and reported articles
然后用二维模拟软件medici模拟,得到器件的阈值电压约为- 0 . 1v ,泄漏电流很小。